IRF3805S-7PPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

160A

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Transistor Application :

SWITCHING

Series :

HEXFET®

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

JESD-30 Code :

R-PSSO-G6

Number of Elements :

1

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.0026Ohm

Avalanche Energy Rating (Eas) :

680 mJ

Vgs (Max) :

±20V

Packaging :

Tube

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

55V

Power Dissipation-Max :

300W Tc

Surface Mount :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Published :

2006

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 140A, 10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Pulsed Drain Current-Max (IDM) :

1000A

Number of Terminations :

6

Input Capacitance (Ciss) (Max) @ Vds :

7820pF @ 25V

FET Type :

N-Channel

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

DS Breakdown Voltage-Min :

55V