IRF3805

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2007

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 75A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

330W Tc

Number of Elements :

1

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

ECCN Code :

EAR99

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

890A

Series :

HEXFET®

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

FAST SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

290nC @ 10V

Avalanche Energy Rating (Eas) :

730 mJ

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.0033Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

7960pF @ 25V

Drain to Source Voltage (Vdss) :

55V

Drain Current-Max (Abs) (ID) :

220A

DS Breakdown Voltage-Min :

55V

Surface Mount :

No

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

3

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

75A Tc