IRF3717PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Contains Lead, Lead Free

Recovery Time :

32 ns

Turn-Off Delay Time :

15 ns

Power Dissipation :

2.5W

Voltage - Rated DC :

20V

Terminal Position :

Dual

JESD-609 Code :

e3

Published :

2004

Gate to Source Voltage (Vgs) :

20V

Height :

1.4986mm

Packaging :

Tube

Threshold Voltage :

2V

Resistance :

4.4mOhm

Length :

4.9784mm

Turn On Delay Time :

12 ns

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Nominal Vgs :

2 V

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 4.5V

Series :

HEXFET®

Number of Elements :

1

Vgs (Max) :

±20V

Radiation Hardening :

No

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 20A, 10V

Fall Time (Typ) :

6 ns

Mounting Type :

Surface Mount

Number of Pins :

8

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2890pF @ 10V

Continuous Drain Current (ID) :

20A

Terminal Form :

Gull wing

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation-Max :

2.5W Ta

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Avalanche Energy Rating (Eas) :

32 mJ

Transistor Application :

SWITCHING

Current Rating :

20A

Number of Terminations :

8

Width :

3.9878mm

ECCN Code :

EAR99

Rise Time :

14ns

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Element Configuration :

Single

Drain to Source Breakdown Voltage :

20V

Terminal Finish :

Matte Tin (Sn)