IRF3717

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 4.5V

Vgs (Max) :

±20V

Series :

HEXFET®

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

MS-012AA

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

20A

Drain to Source Voltage (Vdss) :

20V

Time@Peak Reflow Temperature-Max (s) :

30

HTS Code :

8541.29.00.95

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 20A, 10V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G8

Terminal Form :

Gull wing

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

2890pF @ 10V

Number of Terminations :

8

Published :

2004

Pulsed Drain Current-Max (IDM) :

160A

Terminal Finish :

TIN LEAD

Power Dissipation-Max :

2.5W Ta

Avalanche Energy Rating (Eas) :

32 mJ

DS Breakdown Voltage-Min :

20V

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.0044Ohm

JESD-609 Code :

e0

Peak Reflow Temperature (Cel) :

245

RoHS Status :

Non-RoHS Compliant

Packaging :

Tube