IRF3710ZSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Width :

9.65mm

Number of Terminations :

2

Transistor Application :

SWITCHING

Termination :

SMD/SMT

Element Configuration :

Single

JESD-609 Code :

e3

FET Type :

N-Channel

Number of Elements :

1

Avalanche Energy Rating (Eas) :

200 mJ

Voltage - Rated DC :

100V

Nominal Vgs :

4 V

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

160W

Rds On (Max) @ Id, Vgs :

18m Ω @ 35A, 10V

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Length :

10.668mm

Pulsed Drain Current-Max (IDM) :

240A

Dual Supply Voltage :

100V

Radiation Hardening :

No

Resistance :

18mOhm

Number of Channels :

1

Current Rating :

59A

Series :

HEXFET®

Power Dissipation-Max :

160W Tc

Height :

5.084mm

Vgs (Max) :

±20V

Turn On Delay Time :

17 ns

Recovery Time :

75 ns

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

59A

Turn-Off Delay Time :

41 ns

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2003

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

59A Tc

Lead Free :

Lead Free

Rise Time :

77ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

100V

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Max Junction Temperature (Tj) :

175°C

Fall Time (Typ) :

56 ns

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 250µA

Reverse Recovery Time :

50 ns

Threshold Voltage :

4V