IRF3710STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Dual Supply Voltage :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Nominal Vgs :

4 V

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Fall Time (Typ) :

47 ns

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

200W Tc

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Radiation Hardening :

No

Number of Elements :

1

Drain to Source Breakdown Voltage :

100V

Width :

9.65mm

Recovery Time :

220 ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Published :

2009

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Element Configuration :

Single

Voltage - Rated DC :

100V

Factory Lead Time :

12 Weeks

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Contains Lead, Lead Free

Series :

HEXFET®

Number of Pins :

3

Resistance :

23mOhm

Length :

10.668mm

Transistor Application :

SWITCHING

Turn-Off Delay Time :

45 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

200W

Turn On Delay Time :

12 ns

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

280 mJ

Rise Time :

58ns

Current Rating :

57A

Threshold Voltage :

4V

Input Capacitance (Ciss) (Max) @ Vds :

3130pF @ 25V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

23m Ω @ 28A, 10V

Current - Continuous Drain (Id) @ 25°C :

57A Tc

Termination :

SMD/SMT

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

57A

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Height :

4.826mm

Mount :

Surface Mount

ECCN Code :

EAR99