IRF3710LPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

49A

Turn On Delay Time :

12 ns

Resistance :

23mOhm

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

3130pF @ 25V

Published :

2004

Packaging :

Tube

Transistor Application :

SWITCHING

Radiation Hardening :

No

FET Type :

N-Channel

Fall Time (Typ) :

47 ns

Mounting Type :

Through Hole

Voltage - Rated DC :

100V

Lead Free :

Lead Free

Factory Lead Time :

14 Weeks

Continuous Drain Current (ID) :

57A

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Length :

10.668mm

Drain to Source Breakdown Voltage :

100V

JESD-609 Code :

e3

Number of Pins :

3

Width :

4.826mm

Rds On (Max) @ Id, Vgs :

23m Ω @ 28A, 10V

Element Configuration :

Single

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Height :

9.65mm

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

RoHS Status :

ROHS3 Compliant

Rise Time :

58ns

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

200W Tc

Current - Continuous Drain (Id) @ 25°C :

57A Tc

Turn-Off Delay Time :

45 ns

Power Dissipation :

200W

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

280 mJ

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Current Rating :

57A