IRF3709ZSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

79W Tc

Packaging :

Tube

Number of Elements :

1

Mounting Type :

Surface Mount

Rise Time :

41ns

Threshold Voltage :

2.25V

Min Operating Temperature :

-55°C

Resistance :

6.3mOhm

Recovery Time :

24 ns

Number of Pins :

3

Current Rating :

87A

Nominal Vgs :

2.25 V

Drain to Source Resistance :

6.3mOhm

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2130pF @ 15V

REACH SVHC :

No SVHC

Rds On Max :

6.3 mΩ

Power Dissipation :

79mW

Continuous Drain Current (ID) :

87A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

30V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

87A Tc

Rds On (Max) @ Id, Vgs :

6.3mOhm @ 21A, 10V

Element Configuration :

Single

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Published :

2004

Radiation Hardening :

No

Vgs (Max) :

±20V

Input Capacitance :

2.13nF

Supplier Device Package :

D2PAK

Fall Time (Typ) :

4.7 ns

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Voltage - Rated DC :

30V

Height :

4.826mm

Turn-Off Delay Time :

16 ns

Length :

10.668mm

Width :

9.65mm

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

30V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Turn On Delay Time :

13 ns

Max Operating Temperature :

175°C