IRF3709ZLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Rise Time :

41ns

Supplier Device Package :

TO-262

Radiation Hardening :

No

Voltage - Rated DC :

30V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain to Source Resistance :

6.3mOhm

Power Dissipation :

79W

Input Capacitance :

2.13nF

Element Configuration :

Single

Mount :

Through Hole

Min Operating Temperature :

-55°C

Mounting Type :

Through Hole

Max Operating Temperature :

175°C

Drain to Source Breakdown Voltage :

30V

FET Type :

N-Channel

Resistance :

6.3mOhm

Current - Continuous Drain (Id) @ 25°C :

87A Tc

Length :

10.668mm

Number of Pins :

3

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

13 ns

Published :

2004

Fall Time (Typ) :

4.7 ns

Number of Elements :

1

Rds On Max :

6.3 mΩ

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

2130pF @ 15V

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

87A

Current Rating :

87A

Vgs (Max) :

±20V

Power Dissipation-Max :

79W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

16 ns

Rds On (Max) @ Id, Vgs :

6.3mOhm @ 21A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

30V

Width :

4.826mm

Height :

9.65mm