IRF3709STRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

2672pF @ 16V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 5V

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Published :

2001

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

75A

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.009Ohm

DS Breakdown Voltage-Min :

30V

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Surface Mount :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

382 mJ

Terminal Position :

Single

Series :

HEXFET®

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

360A

Power Dissipation-Max :

3.1W Ta 120W Tc

Rds On (Max) @ Id, Vgs :

9m Ω @ 15A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE