IRF3709

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.009Ohm

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

382 mJ

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

360A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Power Dissipation-Max :

3.1W Ta 120W Tc

DS Breakdown Voltage-Min :

30V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Drain to Source Voltage (Vdss) :

30V

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2672pF @ 16V

FET Type :

N-Channel

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 5V

Number of Elements :

1

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Published :

2001

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

9m Ω @ 15A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

90A

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-220-3

Surface Mount :

No

Case Connection :

DRAIN