IRF3708PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2417pF @ 15V

Published :

2000

Mount :

Through Hole

Case Connection :

DRAIN

Fall Time (Typ) :

3.7 ns

Power Dissipation-Max :

87W Tc

Factory Lead Time :

14 Weeks

Pulsed Drain Current-Max (IDM) :

248A

Power Dissipation :

87W

Lead Free :

Lead Free

Length :

10.5156mm

Rise Time :

50ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Rds On (Max) @ Id, Vgs :

12m Ω @ 15A, 10V

Height :

8.763mm

Number of Pins :

3

Radiation Hardening :

No

Element Configuration :

Single

Turn On Delay Time :

7.2 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

17.6 ns

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

12V

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 4.5V

Transistor Element Material :

SILICON

Width :

4.69mm

Recovery Time :

65 ns

Termination :

Through Hole

Vgs (Max) :

±12V

ECCN Code :

EAR99

Threshold Voltage :

2V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Dual Supply Voltage :

30V

Nominal Vgs :

2 V

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

62A Tc

Packaging :

Tube

Current Rating :

62A

FET Type :

N-Channel

Resistance :

12mOhm

Operating Temperature :

-55°C~175°C TJ

Voltage - Rated DC :

30V

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

62A