IRF3707ZS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

RoHS Status :

Non-RoHS Compliant

Terminal Position :

Single

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0095Ohm

Power Dissipation-Max :

57W Tc

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1210pF @ 15V

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 21A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Case Connection :

DRAIN

Number of Terminations :

2

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Pulsed Drain Current-Max (IDM) :

230A

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Series :

HEXFET®

JESD-30 Code :

R-PSSO-G2

Published :

2003

Terminal Finish :

TIN LEAD

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Drain Current-Max (Abs) (ID) :

59A

Peak Reflow Temperature (Cel) :

225

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e0

Qualification Status :

Not Qualified

Packaging :

Tube

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

59A Tc

Avalanche Energy Rating (Eas) :

40 mJ

Mounting Type :

Surface Mount