IRF3707PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Height :

8.77mm

Drain to Source Resistance :

17mOhm

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1990pF @ 15V

Fall Time (Typ) :

3.3 ns

Supplier Device Package :

TO-220AB

Continuous Drain Current (ID) :

62A

Power Dissipation :

87W

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

62A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On Max :

12.5 mΩ

Series :

HEXFET®

Radiation Hardening :

No

Number of Elements :

1

Rise Time :

78ns

Drain to Source Voltage (Vdss) :

30V

Published :

2000

Voltage - Rated DC :

30V

Packaging :

Tube

Mount :

Through Hole

Vgs (Max) :

±20V

Package / Case :

TO-220-3

Turn On Delay Time :

8.5 ns

Element Configuration :

Single

Input Capacitance :

1.99nF

Resistance :

12.5mOhm

Rds On (Max) @ Id, Vgs :

12.5mOhm @ 15A, 10V

Power Dissipation-Max :

87W Tc

Max Operating Temperature :

175°C

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Current Rating :

62A

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V

Min Operating Temperature :

-55°C

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

3V @ 250µA

Lead Free :

Lead Free

Turn-Off Delay Time :

11.8 ns