IRF3706SPBF
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- Mfr.Part #
- IRF3706SPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 77A D2PAK
- Stock
- 8,657
- In Stock ：
- 8,657
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 77A
- Lead Free :
- Lead Free
- Published :
- 2004
- Rise Time :
- 87ns
- Series :
- HEXFET®
- RoHS Status :
- RoHS Compliant
- Nominal Vgs :
- 2 V
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Vgs (Max) :
- ±12V
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 4.5V
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Number of Elements :
- 1
- Current Rating :
- 77A
- Min Operating Temperature :
- -55°C
- Power Dissipation-Max :
- 88W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 77A Tc
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 20V
- Drain to Source Voltage (Vdss) :
- 20V
- Max Operating Temperature :
- 175°C
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 4.8 ns
- Termination :
- SMD/SMT
- Voltage - Rated DC :
- 20V
- Gate to Source Voltage (Vgs) :
- 12V
- Input Capacitance :
- 2.41nF
- Input Capacitance (Ciss) (Max) @ Vds :
- 2410pF @ 10V
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn On Delay Time :
- 6.8 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.8V 10V
- Drain to Source Resistance :
- 10.5mOhm
- Rds On (Max) @ Id, Vgs :
- 8.5mOhm @ 15A, 10V
- Power Dissipation :
- 88W
- Dual Supply Voltage :
- 20V
- Rds On Max :
- 8.5 mΩ
- Resistance :
- 8.5mOhm
- Supplier Device Package :
- D2PAK
- Turn-Off Delay Time :
- 17 ns
- Datasheets
- IRF3706SPBF
N-Channel Tube 8.5mOhm @ 15A, 10V ±12V 2410pF @ 10V 35nC @ 4.5V 20V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3706SPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2410pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 77A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 20V, and this device has a drainage-to-source breakdown voltage of 20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 17 ns.This device has a drain-to-source resistance of 10.5mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 12V to 1.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (2.8V 10V), this device contributes to a reduction in overall power consumption.
IRF3706SPBF Features
a continuous drain current (ID) of 77A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 10.5mOhm
a 20V drain to source voltage (Vdss)
IRF3706SPBF Applications
There are a lot of Infineon Technologies
IRF3706SPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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