IRF3704ZLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Rise Time :

38ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 4.5V

Vgs (Max) :

±20V

Voltage - Rated DC :

20V

Rds On Max :

7.9 mΩ

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.826mm

FET Type :

N-Channel

Published :

2004

Continuous Drain Current (ID) :

67A

Turn-Off Delay Time :

11 ns

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

20V

Power Dissipation :

57W

Input Capacitance :

1.22nF

Drain to Source Breakdown Voltage :

20V

Turn On Delay Time :

8.9 ns

Current - Continuous Drain (Id) @ 25°C :

67A Tc

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

1220pF @ 10V

Height :

9.65mm

RoHS Status :

RoHS Compliant

Drain to Source Resistance :

11.1mOhm

Fall Time (Typ) :

4.2 ns

Supplier Device Package :

TO-262

Current Rating :

67A

Length :

10.668mm

Number of Elements :

1

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

7.9mOhm @ 21A, 10V

Packaging :

Tube

Series :

HEXFET®

Min Operating Temperature :

-55°C

Max Operating Temperature :

175°C

Lead Free :

Lead Free

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Vgs(th) (Max) @ Id :

2.55V @ 250µA

Power Dissipation-Max :

57W Tc