IRF3704

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Drain-source On Resistance-Max :

0.0079Ohm

ECCN Code :

EAR99

Published :

2000

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

42A

Mounting Type :

Through Hole

Series :

HEXFET®

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

87W Tc

Current - Continuous Drain (Id) @ 25°C :

77A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

20V

Number of Elements :

1

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

9m Ω @ 15A, 10V

FET Type :

N-Channel

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Case Connection :

DRAIN

Package / Case :

TO-220-3

RoHS Status :

Non-RoHS Compliant

Avalanche Energy Rating (Eas) :

36 mJ

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

260A

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material :

SILICON

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

1996pF @ 10V

DS Breakdown Voltage-Min :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V