IRF3610STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

410A

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

103A Tc

Number of Terminations :

2

ECCN Code :

EAR99

Min Operating Temperature :

-55°C

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Factory Lead Time :

12 Weeks

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

11.6m Ω @ 62A, 10V

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Number of Elements :

1

Series :

HEXFET®

Published :

2013

DS Breakdown Voltage-Min :

100V

Max Operating Temperature :

175°C

Drain to Source Voltage (Vdss) :

100V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

103A

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Drain-source On Resistance-Max :

0.0116Ohm

Max Power Dissipation :

333W

Input Capacitance (Ciss) (Max) @ Vds :

5380pF @ 25V

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

460 mJ

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3