IRF3610SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

460 mJ

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Lead Free :

Lead Free

Nominal Vgs :

4 V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

11.6m Ω @ 62A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2013

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

103A Tc

Packaging :

Tube

ECCN Code :

EAR99

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Rise Time :

55ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

15 ns

Drain to Source Voltage (Vdss) :

100V

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Transistor Element Material :

SILICON

Mount :

Surface Mount

Transistor Application :

SWITCHING

Number of Pins :

3

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Number of Elements :

1

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

5380pF @ 25V

Power Dissipation-Max :

333W Tc

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

333W

Fall Time (Typ) :

43 ns

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

103A

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

2

Turn-Off Delay Time :

77 ns

REACH SVHC :

No SVHC