IRF3415STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Recovery Time :

390 ns

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Power Dissipation-Max :

3.8W Ta 200W Tc

Turn On Delay Time :

12 ns

Rise Time :

55ns

FET Type :

N-Channel

Height :

4.826mm

Lead Free :

Contains Lead, Lead Free

Nominal Vgs :

4 V

Factory Lead Time :

12 Weeks

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

590 mJ

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

42m Ω @ 22A, 10V

JESD-609 Code :

e3

Radiation Hardening :

No

Published :

1998

Resistance :

4.2mOhm

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Packaging :

Tape and Reel (TR)

Termination :

SMD/SMT

Drain to Source Breakdown Voltage :

150V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Turn-Off Delay Time :

71 ns

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Series :

HEXFET®

Power Dissipation :

3.8W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Width :

9.65mm

Fall Time (Typ) :

69 ns

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Current Rating :

43A

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

Length :

10.668mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Threshold Voltage :

4V

Current - Continuous Drain (Id) @ 25°C :

43A Tc

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Voltage - Rated DC :

150V

Dual Supply Voltage :

150V

Element Configuration :

Single

Continuous Drain Current (ID) :

43A

Mount :

Surface Mount