IRF3315SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Drain-source On Resistance-Max :

0.082Ohm

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Published :

1997

Power Dissipation-Max :

3.8W Ta 94W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Fall Time (Typ) :

38 ns

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

4 V

Voltage - Rated DC :

150V

Rds On (Max) @ Id, Vgs :

82m Ω @ 12A, 10V

FET Type :

N-Channel

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

150V

Number of Terminations :

2

Height :

4.83mm

Transistor Element Material :

SILICON

Turn-Off Delay Time :

49 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins :

3

Dual Supply Voltage :

150V

Packaging :

Tube

Rise Time :

32ns

Time@Peak Reflow Temperature-Max (s) :

30

Termination :

SMD/SMT

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Mount :

Surface Mount

Power Dissipation :

84W

Radiation Hardening :

No

Turn On Delay Time :

9.6 ns

Series :

HEXFET®

Threshold Voltage :

4V

Continuous Drain Current (ID) :

21A

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

Case Connection :

DRAIN

Width :

9.65mm

Pulsed Drain Current-Max (IDM) :

84A

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Length :

10.67mm

Terminal Form :

Gull wing

Current Rating :

21A