IRF331

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

RoHS Status :

Non-RoHS Compliant

DS Breakdown Voltage-Min :

150V

Series :

HEXFET®

JEDEC-95 Code :

TO-220AB

Terminal Position :

Single

Number of Terminations :

3

Power Dissipation-Max :

136W Tc

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Case Connection :

DRAIN

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

150V

Published :

1997

Rds On (Max) @ Id, Vgs :

70m Ω @ 12A, 10V

Pulsed Drain Current-Max (IDM) :

108A

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Drain-source On Resistance-Max :

0.07Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

350 mJ

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Drain Current-Max (Abs) (ID) :

27A

FET Type :

N-Channel

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V