IRF3305PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2004

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Power Dissipation-Max :

330W Tc

Case Connection :

DRAIN

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Voltage - Rated DC :

55V

Continuous Drain Current (ID) :

75A

Length :

10.668mm

Input Capacitance (Ciss) (Max) @ Vds :

3650pF @ 25V

Lead Free :

Lead Free

Vgs (Max) :

±20V

Element Configuration :

Single

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

560A

Number of Elements :

1

RoHS Status :

RoHS Compliant

Avalanche Energy Rating (Eas) :

860 mJ

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

55V

Width :

4.826mm

Turn On Delay Time :

16 ns

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

8m Ω @ 75A, 10V

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Drain-source On Resistance-Max :

0.008Ohm

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Current Rating :

75A

Fall Time (Typ) :

34 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Turn-Off Delay Time :

43 ns

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Number of Terminations :

3

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

16.51mm

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Series :

HEXFET®

Rise Time :

88ns

Power Dissipation :

330W