IRF3205ZSTRLPBF

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Mfr.Part #
IRF3205ZSTRLPBF
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 55V 75A D2PAK
Stock
141,020
In Stock :
141,020

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Drain to Source Breakdown Voltage :
55V
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Radiation Hardening :
No
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Operating Temperature :
-55°C~175°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
2
Turn-Off Delay Time :
45 ns
Power Dissipation :
170W
Input Capacitance (Ciss) (Max) @ Vds :
3450pF @ 25V
RoHS Status :
ROHS3 Compliant
Pulsed Drain Current-Max (IDM) :
440A
Peak Reflow Temperature (Cel) :
260
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Terminal Form :
Gull wing
Continuous Drain Current (ID) :
75A
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
170W Tc
Number of Pins :
3
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Nominal Vgs :
20 V
Height :
4.826mm
Turn On Delay Time :
18 ns
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 250µA
Length :
10.668mm
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Resistance :
6.5mOhm
Mounting Type :
Surface Mount
Packaging :
Tape and Reel (TR)
Lead Free :
Lead Free
Rds On (Max) @ Id, Vgs :
6.5m Ω @ 66A, 10V
Time@Peak Reflow Temperature-Max (s) :
30
JESD-30 Code :
R-PSSO-G2
REACH SVHC :
No SVHC
Rise Time :
95ns
Factory Lead Time :
12 Weeks
Published :
2001
Gate to Source Voltage (Vgs) :
20V
Case Connection :
DRAIN
Width :
9.65mm
Mount :
Surface Mount
Element Configuration :
Single
ECCN Code :
EAR99
Series :
HEXFET®
Avalanche Energy Rating (Eas) :
250 mJ
Fall Time (Typ) :
67 ns
JESD-609 Code :
e3
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Datasheets
IRF3205ZSTRLPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF3205ZSTRLPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Number of Pins:3, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, IRF3205ZSTRLPBF pinout, IRF3205ZSTRLPBF datasheet PDF, IRF3205ZSTRLPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF3205ZSTRLPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF3205ZSTRLPBF


N-Channel Tape & Reel (TR) 6.5m Ω @ 66A, 10V ±20V 3450pF @ 25V 110nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF3205ZSTRLPBF Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 250 mJ.A device's maximum input capacitance is 3450pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 75A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 45 ns.Its maximum pulsed drain current is 440A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.

IRF3205ZSTRLPBF Features


the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 440A.


IRF3205ZSTRLPBF Applications


There are a lot of Infineon Technologies
IRF3205ZSTRLPBF applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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