IRF3205ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

55V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HEXFET®

Power Dissipation :

170W

Threshold Voltage :

4V

REACH SVHC :

No SVHC

Rise Time :

95ns

Time@Peak Reflow Temperature-Max (s) :

30

Current Rating :

75A

Power Dissipation-Max :

170W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

FET Type :

N-Channel

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Case Connection :

DRAIN

Lead Free :

Contains Lead, Lead Free

Dual Supply Voltage :

55V

Width :

4.826mm

Resistance :

6.5mOhm

Avalanche Energy Rating (Eas) :

250 mJ

Mounting Type :

Through Hole

Turn-Off Delay Time :

45 ns

Number of Terminations :

3

Length :

10.668mm

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Peak Reflow Temperature (Cel) :

250

Mount :

Through Hole

Nominal Vgs :

4 V

Fall Time (Typ) :

67 ns

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 66A, 10V

Drain to Source Breakdown Voltage :

55V

Number of Pins :

3

Continuous Drain Current (ID) :

75A

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

18 ns

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Published :

2001

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Termination :

Through Hole

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Pulsed Drain Current-Max (IDM) :

440A

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3450pF @ 25V

Packaging :

Tube

Recovery Time :

42 ns

Height :

9.017mm

Factory Lead Time :

12 Weeks

Terminal Finish :

MATTE TIN OVER NICKEL