IRF3205ZLPBF

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Mfr.Part #
IRF3205ZLPBF
Manufacturer
Infineon Technologies
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
MOSFET N-CH 55V 75A TO262
Stock
31,887
In Stock :
31,887

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Vgs (Max) :
±20V
Lead Free :
Lead Free
JESD-609 Code :
e3
Number of Elements :
1
Transistor Element Material :
SILICON
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Pulsed Drain Current-Max (IDM) :
440A
Vgs(th) (Max) @ Id :
4V @ 250µA
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Turn On Delay Time :
18 ns
Length :
10.668mm
Height :
9.65mm
Rise Time :
95ns
RoHS Status :
ROHS3 Compliant
Current Rating :
75A
Case Connection :
DRAIN
Operating Mode :
ENHANCEMENT MODE
Voltage - Rated DC :
55V
Number of Terminations :
3
Time@Peak Reflow Temperature-Max (s) :
30
Mount :
Through Hole
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Width :
4.826mm
Radiation Hardening :
No
ECCN Code :
EAR99
Turn-Off Delay Time :
45 ns
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Operating Temperature :
-55°C~175°C TJ
Number of Pins :
3
Drain-source On Resistance-Max :
0.0065ohm
Series :
HEXFET®
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
3450pF @ 25V
Peak Reflow Temperature (Cel) :
260
Factory Lead Time :
12 Weeks
Threshold Voltage :
4V
Avalanche Energy Rating (Eas) :
250 mJ
Published :
2001
Rds On (Max) @ Id, Vgs :
6.5m Ω @ 66A, 10V
Packaging :
Tube
Continuous Drain Current (ID) :
75A
Power Dissipation-Max :
170W Tc
REACH SVHC :
No SVHC
FET Type :
N-Channel
Power Dissipation :
170W
Gate to Source Voltage (Vgs) :
20V
Fall Time (Typ) :
67 ns
Drain to Source Breakdown Voltage :
55V
Datasheets
IRF3205ZLPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF3205ZLPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, IRF3205ZLPBF pinout, IRF3205ZLPBF datasheet PDF, IRF3205ZLPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF3205ZLPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF3205ZLPBF


N-Channel Tube 6.5m Ω @ 66A, 10V ±20V 3450pF @ 25V 110nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA

IRF3205ZLPBF Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 250 mJ.A device's maximum input capacitance is 3450pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 75A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 45 ns.Its maximum pulsed drain current is 440A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.This device uses no drive voltage (10V) to reduce its overall power consumption.

IRF3205ZLPBF Features


the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 440A.
a threshold voltage of 4V


IRF3205ZLPBF Applications


There are a lot of Infineon Technologies
IRF3205ZLPBF applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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