IRF3205Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 66A, 10V

Avalanche Energy Rating (Eas) :

250 mJ

Series :

HEXFET®

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

55V

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Package / Case :

TO-220-3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

3450pF @ 25V

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

75A

FET Type :

N-Channel

Surface Mount :

No

DS Breakdown Voltage-Min :

55V

Terminal Position :

Single

Number of Elements :

1

Published :

2001

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

440A

Power Dissipation-Max :

170W Tc

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0065ohm

Packaging :

Tube