IRF3205STRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Drain-source On Resistance-Max :

0.008Ohm

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

200W Tc

Published :

2001

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

3247pF @ 25V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

146nC @ 10V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

55V

Pulsed Drain Current-Max (IDM) :

390A

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

75A

JEDEC-95 Code :

TO-252

Rds On (Max) @ Id, Vgs :

8m Ω @ 62A, 10V

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Terminal Form :

Gull wing

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

DS Breakdown Voltage-Min :

55V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

264 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Number of Terminations :

2

Number of Elements :

1