IRF2903ZSTRRP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

RoHS Status :

RoHS Compliant

Qualification Status :

Not Qualified

Series :

HEXFET®

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 75A, 10V

Pulsed Drain Current-Max (IDM) :

1020A

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Reach Compliance Code :

Compliant

Avalanche Energy Rating (Eas) :

820 mJ

Terminal Form :

Gull wing

FET Type :

N-Channel

Published :

2010

Vgs(th) (Max) @ Id :

4V @ 150μA

Transistor Application :

SWITCHING

Power Dissipation-Max :

290W Tc

Drain-source On Resistance-Max :

0.0024Ohm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

30V

Drain Current-Max (Abs) (ID) :

75A

Input Capacitance (Ciss) (Max) @ Vds :

6320pF @ 25V

Terminal Finish :

MATTE TIN OVER NICKEL

Case Connection :

DRAIN

Surface Mount :

yes