IRF200P222

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

203nC @ 10V

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

9820pF @ 50V

Case Connection :

DRAIN

Factory Lead Time :

26 Weeks

Pulsed Drain Current-Max (IDM) :

728A

Drain-source On Resistance-Max :

0.0066Ohm

Power Dissipation-Max :

556W Tc

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-247-3

Terminal Position :

Single

Height :

24.99mm

Number of Terminations :

3

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

StrongIRFET™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 82A, 10V

Surface Mount :

No

Vgs(th) (Max) @ Id :

4V @ 270μA

Max Junction Temperature (Tj) :

175°C

Power Dissipation :

556W

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

182A

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

200V

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Turn-Off Delay Time :

77 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

182A Tc

Turn On Delay Time :

25 ns

Number of Channels :

1

Published :

2013

Packaging :

Tube

JEDEC-95 Code :

TO-247AC

Transistor Element Material :

SILICON