IRF200P223
- Mfr.Part #
- IRF200P223
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 100A TO247AC
- Stock
- 30,841
- In Stock :
- 30,841
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 26 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 102nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.0115Ohm
- Terminal Position :
- Single
- Drain Current-Max (Abs) (ID) :
- 100A
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 5094pF @ 50V
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 11.5m Ω @ 60A, 10V
- DS Breakdown Voltage-Min :
- 200V
- Power Dissipation-Max :
- 313W Tc
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 400A
- Series :
- StrongIRFET™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-247-3
- Operating Temperature :
- -55°C~175°C TJ
- Surface Mount :
- No
- JEDEC-95 Code :
- TO-247AC
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 541 mJ
- Case Connection :
- DRAIN
- Drain to Source Voltage (Vdss) :
- 200V
- Published :
- 2013
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 4V @ 270μA
- Packaging :
- Tube
- Datasheets
- IRF200P223

N-Channel Tube 11.5m Ω @ 60A, 10V ±20V 5094pF @ 50V 102nC @ 10V 200V TO-247-3
IRF200P223 Description
IRF200P223 is a kind of StrongIRFET? power MOSFET manufactured by Infineon Technologies. It is able to provide improved gate, avalanche, and dynamic dv/dt ruggedness, fully characterized capacitance and avalanche SOA, as well as enhanced body diode dv/dt and di/dt capability. As a result, it is well suited for DC/DC and AC/DC converters, brushed, and BLDC motor drive applications.
IRF200P223 Features
-
Pb-free
-
Dynamic dv/dt ruggedness
-
Fully characterized capacitance
-
Full characterized avalanche SOA
-
Available in the TO-247AC package
IRF200P223 Applications
-
UPS and inverter applications
-
Battery-powered circuits
-
Half- and full-bridge topologies
-
Resonant mode power supplies
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