IRF200S234

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

162nC @ 10V

Transistor Application :

SWITCHING

Published :

2013

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

90A

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

6484pF @ 50V

Pulsed Drain Current-Max (IDM) :

312A

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

16.9m Ω @ 51A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

200V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0169Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

417W Tc

Avalanche Energy Rating (Eas) :

693 mJ

Terminal Position :

Single

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

200V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

90A

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-30 Code :

R-PSSO-G2