IRF200S234

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

417W Tc

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

200V

Gate Charge (Qg) (Max) @ Vgs :

162nC @ 10V

Drain Current-Max (Abs) (ID) :

90A

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

312A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

6484pF @ 50V

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Published :

2013

Current - Continuous Drain (Id) @ 25°C :

90A

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

16.9m Ω @ 51A, 10V

Number of Elements :

1

Drain-source On Resistance-Max :

0.0169Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

693 mJ

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

200V

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Terminal Form :

Gull wing