IRF2204PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Lead Free :

Lead Free

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Element Configuration :

Single

Drain to Source Breakdown Voltage :

40V

Published :

2002

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 130A, 10V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

460 mJ

JEDEC-95 Code :

TO-220AB

Width :

4.826mm

Length :

10.668mm

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

REACH SVHC :

No SVHC

Current Rating :

210A

Dual Supply Voltage :

40V

Continuous Drain Current (ID) :

210A

Height :

16.51mm

Input Capacitance (Ciss) (Max) @ Vds :

5890pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Resistance :

3.6Ohm

Current - Continuous Drain (Id) @ 25°C :

210A Tc

Power Dissipation :

330W

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

75A

Turn-Off Delay Time :

62 ns

Contact Plating :

Tin

Pulsed Drain Current-Max (IDM) :

850A

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Threshold Voltage :

4V

Voltage - Rated DC :

40V

Vgs (Max) :

±20V

Rise Time :

140ns

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Package / Case :

TO-220-3

Number of Pins :

3

Turn On Delay Time :

15 ns

Case Connection :

DRAIN

Mount :

Through Hole

Number of Terminations :

3

Nominal Vgs :

4 V

Power Dissipation-Max :

330W Tc

Number of Elements :

1

Fall Time (Typ) :

110 ns

Operating Temperature :

-55°C~175°C TJ