IRF2204PBF

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Mfr.Part #
IRF2204PBF
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 40V 210A TO220AB
Stock
45,744
In Stock :
45,744

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Dual Supply Voltage :
40V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn-Off Delay Time :
62 ns
Power Dissipation :
330W
Operating Temperature :
-55°C~175°C TJ
Gate to Source Voltage (Vgs) :
20V
Contact Plating :
Tin
Rise Time :
140ns
Published :
2002
Height :
16.51mm
Rds On (Max) @ Id, Vgs :
3.6m Ω @ 130A, 10V
Current Rating :
210A
Element Configuration :
Single
Series :
HEXFET®
Drain Current-Max (Abs) (ID) :
75A
Transistor Element Material :
SILICON
Number of Elements :
1
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Mount :
Through Hole
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5890pF @ 25V
Factory Lead Time :
12 Weeks
FET Type :
N-Channel
Continuous Drain Current (ID) :
210A
Voltage - Rated DC :
40V
REACH SVHC :
No SVHC
Package / Case :
TO-220-3
Turn On Delay Time :
15 ns
Nominal Vgs :
4 V
Threshold Voltage :
4V
Number of Terminations :
3
Power Dissipation-Max :
330W Tc
Case Connection :
DRAIN
RoHS Status :
ROHS3 Compliant
Resistance :
3.6Ohm
Length :
10.668mm
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
JEDEC-95 Code :
TO-220AB
Avalanche Energy Rating (Eas) :
460 mJ
Mounting Type :
Through Hole
Fall Time (Typ) :
110 ns
JESD-609 Code :
e3
Lead Free :
Lead Free
Radiation Hardening :
No
Current - Continuous Drain (Id) @ 25°C :
210A Tc
ECCN Code :
EAR99
Drain to Source Breakdown Voltage :
40V
Pulsed Drain Current-Max (IDM) :
850A
Width :
4.826mm
Transistor Application :
SWITCHING
Packaging :
Tube
Datasheets
IRF2204PBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF2204PBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-220-3, Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, IRF2204PBF pinout, IRF2204PBF datasheet PDF, IRF2204PBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF2204PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF2204PBF


N-Channel Tube 3.6m Ω @ 130A, 10V ±20V 5890pF @ 25V 200nC @ 10V TO-220-3

IRF2204PBF Description


To achieve exceptionally low onresistance per silicon area, the IRF2204PBF MOSFET employs the most advanced processing techniques. A 175°C junction working temperature, quick switching speed, and increased repeating avalanche rating are all included in this design. These characteristics combine to make this design a highly efficient and dependable device that may be used in a range of applications.



IRF2204PBF Features


  • Technology for Advanced Processes

  • On-Resistance is really low.

  • Rating for Dynamic dv/dt

  • Operating Temperature: 175°C

  • Quick Switching

  • Avalanche Repetitive Tjmax is the maximum amount of time allowed.

  • Le



IRF2204PBF Applications


IRF2204PBF is intended for general use and can be used in a variety of situations.




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