IRF2204PBF
- Mfr.Part #
- IRF2204PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 210A TO220AB
- Stock
- 45,744
- In Stock :
- 45,744
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- Dual Supply Voltage :
- 40V
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 460 mJ
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 4V
- Contact Plating :
- Tin
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Current Rating :
- 210A
- Rds On (Max) @ Id, Vgs :
- 3.6m Ω @ 130A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 330W Tc
- Element Configuration :
- Single
- Resistance :
- 3.6Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Radiation Hardening :
- No
- JEDEC-95 Code :
- TO-220AB
- Published :
- 2002
- Fall Time (Typ) :
- 110 ns
- Number of Pins :
- 3
- Rise Time :
- 140ns
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Nominal Vgs :
- 4 V
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 15 ns
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 40V
- Height :
- 16.51mm
- Turn-Off Delay Time :
- 62 ns
- Series :
- HEXFET®
- Length :
- 10.668mm
- Continuous Drain Current (ID) :
- 210A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 210A Tc
- Pulsed Drain Current-Max (IDM) :
- 850A
- Width :
- 4.826mm
- Factory Lead Time :
- 12 Weeks
- Power Dissipation :
- 330W
- Drain to Source Breakdown Voltage :
- 40V
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Drain Current-Max (Abs) (ID) :
- 75A
- Input Capacitance (Ciss) (Max) @ Vds :
- 5890pF @ 25V
- Datasheets
- IRF2204PBF

N-Channel Tube 3.6m Ω @ 130A, 10V ±20V 5890pF @ 25V 200nC @ 10V TO-220-3
IRF2204PBF Description
To achieve exceptionally low onresistance per silicon area, the IRF2204PBF MOSFET employs the most advanced processing techniques. A 175°C junction working temperature, quick switching speed, and increased repeating avalanche rating are all included in this design. These characteristics combine to make this design a highly efficient and dependable device that may be used in a range of applications.
IRF2204PBF Features
-
Technology for Advanced Processes
-
On-Resistance is really low.
-
Rating for Dynamic dv/dt
-
Operating Temperature: 175°C
-
Quick Switching
-
Avalanche Repetitive Tjmax is the maximum amount of time allowed.
-
Le
IRF2204PBF Applications
IRF2204PBF is intended for general use and can be used in a variety of situations.
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