IRF2204PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

75A

Power Dissipation :

330W

Factory Lead Time :

12 Weeks

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

850A

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 130A, 10V

Threshold Voltage :

4V

Input Capacitance (Ciss) (Max) @ Vds :

5890pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

110 ns

Continuous Drain Current (ID) :

210A

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

330W Tc

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Packaging :

Tube

Turn-Off Delay Time :

62 ns

Nominal Vgs :

4 V

Number of Terminations :

3

Voltage - Rated DC :

40V

Transistor Element Material :

SILICON

Height :

16.51mm

Mounting Type :

Through Hole

Number of Elements :

1

JESD-609 Code :

e3

Length :

10.668mm

Element Configuration :

Single

Resistance :

3.6Ohm

Avalanche Energy Rating (Eas) :

460 mJ

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Series :

HEXFET®

Current Rating :

210A

Drain to Source Breakdown Voltage :

40V

Current - Continuous Drain (Id) @ 25°C :

210A Tc

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Dual Supply Voltage :

40V

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Turn On Delay Time :

15 ns

FET Type :

N-Channel

Published :

2002

Mount :

Through Hole

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Rise Time :

140ns

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Width :

4.826mm