IRF2807ZSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

7.4mOhm

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

9.4m Ω @ 53A, 10V

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

170W Tc

Turn On Delay Time :

18 ns

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

75V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Length :

10.668mm

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

45 ns

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

FET Type :

N-Channel

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

3270pF @ 25V

Drain Current-Max (Abs) (ID) :

89A

Continuous Drain Current (ID) :

75A

Element Configuration :

Single

Width :

9.65mm

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

2

JESD-609 Code :

e3

Mount :

Surface Mount

Vgs (Max) :

±20V

Published :

2004

Number of Elements :

1

Turn-Off Delay Time :

40 ns

Power Dissipation :

170W

Rise Time :

79ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

4.826mm

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Radiation Hardening :

No

Transistor Application :

SWITCHING

Number of Pins :

3

Lead Free :

Lead Free

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB