IRF2807ZSTRLPBF
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- Mfr.Part #
- IRF2807ZSTRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 75A D2PAK
- Stock
- 59,282
- In Stock ：
- 59,282
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 4.826mm
- JESD-609 Code :
- e3
- Length :
- 10.668mm
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSSO-G2
- Rds On (Max) @ Id, Vgs :
- 9.4m Ω @ 53A, 10V
- Width :
- 9.65mm
- Turn On Delay Time :
- 18 ns
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 170W Tc
- Turn-Off Delay Time :
- 40 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- 260
- Drain to Source Breakdown Voltage :
- 75V
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 30
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 3270pF @ 25V
- Continuous Drain Current (ID) :
- 75A
- Number of Terminations :
- 2
- Factory Lead Time :
- 12 Weeks
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Rise Time :
- 79ns
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Series :
- HEXFET®
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Pins :
- 3
- Fall Time (Typ) :
- 45 ns
- Drain Current-Max (Abs) (ID) :
- 89A
- Power Dissipation :
- 170W
- Published :
- 2004
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Resistance :
- 7.4mOhm
- Case Connection :
- DRAIN
- Datasheets
- IRF2807ZSTRLPBF
N-Channel Tape & Reel (TR) 9.4m Ω @ 53A, 10V ±20V 3270pF @ 25V 110nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF2807ZSTRLPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3270pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 75A amps.In this device, the drain-source breakdown voltage is 75V and VGS=75V, so the drain-source breakdown voltage is 75V in this case.A device can conduct a maximum continuous current of [89A] according to its drain current.It is [40 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRF2807ZSTRLPBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 40 ns
IRF2807ZSTRLPBF Applications
There are a lot of Infineon Technologies
IRF2807ZSTRLPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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