IRF2807ZS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Series :

HEXFET®

Surface Mount :

yes

RoHS Status :

Non-RoHS Compliant

Packaging :

Tube

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

75V

Published :

2003

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Avalanche Energy Rating (Eas) :

200 mJ

Mounting Type :

Surface Mount

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

75V

Rds On (Max) @ Id, Vgs :

9.4m Ω @ 53A, 10V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

350A

Transistor Element Material :

SILICON

Terminal Position :

Single

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

75A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

3270pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Power Dissipation-Max :

170W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.0094Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA