IRF2807ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Number of Pins :

3

Continuous Drain Current (ID) :

75A

Voltage - Rated DC :

75V

Turn On Delay Time :

18 ns

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Dual Supply Voltage :

75V

Number of Elements :

1

Series :

HEXFET®

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

3270pF @ 25V

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Width :

4.826mm

Power Dissipation :

170W

Power Dissipation-Max :

170W Tc

Lead Free :

Contains Lead, Lead Free

Vgs (Max) :

±20V

Mount :

Through Hole

Resistance :

9.4Ohm

Turn-Off Delay Time :

40 ns

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

79ns

Packaging :

Tube

Height :

9.017mm

Mounting Type :

Through Hole

Threshold Voltage :

4V

Fall Time (Typ) :

45 ns

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

9.4m Ω @ 53A, 10V

Current Rating :

75A

Length :

10.668mm

ECCN Code :

EAR99

Published :

2003

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

75V

Nominal Vgs :

4 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Radiation Hardening :

No