IRF2807STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

FET Type :

N-Channel

Mounting Type :

Surface Mount

Fall Time (Typ) :

48 ns

Factory Lead Time :

12 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Element Configuration :

Single

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

3820pF @ 25V

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

4V

Published :

2002

Series :

HEXFET®

Nominal Vgs :

4 V

Turn On Delay Time :

13 ns

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

13m Ω @ 43A, 10V

Continuous Drain Current (ID) :

82A

Pulsed Drain Current-Max (IDM) :

280A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Termination :

SMD/SMT

Drain Current-Max (Abs) (ID) :

75A

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Recovery Time :

150 ns

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

170W

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Current Rating :

82A

Case Connection :

DRAIN

Radiation Hardening :

No

Rise Time :

64ns

Dual Supply Voltage :

75V

Length :

10.668mm

Height :

4.826mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Voltage - Rated DC :

75V

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Contains Lead, Lead Free

Turn-Off Delay Time :

49 ns

Vgs (Max) :

±20V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Transistor Application :

SWITCHING

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

75V

Number of Pins :

3

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

230W Tc

Current - Continuous Drain (Id) @ 25°C :

82A Tc

Width :

9.65mm