IRF2807SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

3820pF @ 25V

Terminal Position :

Single

Number of Terminations :

2

Published :

2002

Drain-source On Resistance-Max :

0.013Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Surface Mount :

yes

Qualification Status :

Not Qualified

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

75A

Drain to Source Voltage (Vdss) :

75V

Rds On (Max) @ Id, Vgs :

13m Ω @ 43A, 10V

DS Breakdown Voltage-Min :

75V

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

82A Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Code :

EAR99

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

340 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

280A

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

230W Tc

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE