IRF2807S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2002

Surface Mount :

yes

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Qualification Status :

Not Qualified

HTS Code :

8541.29.00.95

Peak Reflow Temperature (Cel) :

225

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

75V

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

75A

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

82A Tc

Transistor Application :

SWITCHING

Packaging :

Tube

JESD-609 Code :

e0

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

13m Ω @ 43A, 10V

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Pulsed Drain Current-Max (IDM) :

280A

Number of Terminations :

2

DS Breakdown Voltage-Min :

75V

Mounting Type :

Surface Mount

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

230W Tc

Drain-source On Resistance-Max :

0.013Ohm

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

3820pF @ 25V

Terminal Finish :

Tin/Lead (Sn/Pb)

Avalanche Energy Rating (Eas) :

340 mJ

Transistor Element Material :

SILICON