IRF2807PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Element Configuration :

Single

Fall Time (Typ) :

48 ns

Gate to Source Voltage (Vgs) :

20V

Height :

8.77mm

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

250

JESD-609 Code :

e3

Voltage - Rated DC :

75V

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Number of Terminations :

3

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

82A Tc

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Termination :

Through Hole

Published :

2001

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

4 V

Width :

4.69mm

Input Capacitance (Ciss) (Max) @ Vds :

3820pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Resistance :

13mOhm

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

280A

JEDEC-95 Code :

TO-220AB

Case Connection :

DRAIN

Turn On Delay Time :

13 ns

Operating Temperature :

-55°C~175°C TJ

Series :

HEXFET®

Dual Supply Voltage :

75V

Number of Elements :

1

Current Rating :

82A

Recovery Time :

150 ns

Lead Free :

Contains Lead, Lead Free

Power Dissipation :

230W

Threshold Voltage :

4V

Drain to Source Breakdown Voltage :

75V

Continuous Drain Current (ID) :

82A

Rise Time :

64ns

Drain Current-Max (Abs) (ID) :

75A

Length :

10.54mm

Mount :

Surface Mount, Through Hole

Rds On (Max) @ Id, Vgs :

13m Ω @ 43A, 10V

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Power Dissipation-Max :

230W Tc

Lead Pitch :

2.54mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

49 ns