IRF2805STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

5110pF @ 25V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Peak Reflow Temperature (Cel) :

260

Resistance :

4.7ohm

Published :

2007

Transistor Element Material :

SILICON

Series :

HEXFET®

Number of Pins :

3

Mount :

Surface Mount

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 104A, 10V

Length :

10.668mm

Turn On Delay Time :

14 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Current-Max (IDM) :

700A

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

135A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Drain to Source Breakdown Voltage :

55V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Drain Current-Max (Abs) (ID) :

75A

Width :

9.65mm

Case Connection :

DRAIN

Terminal Form :

Gull wing

Factory Lead Time :

14 Weeks

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Rise Time :

120ns

Radiation Hardening :

No

Element Configuration :

Single

Lead Free :

Lead Free

Continuous Drain Current (ID) :

135A

Turn-Off Delay Time :

68 ns

Power Dissipation-Max :

200W Tc

Power Dissipation :

200W

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

110 ns

Height :

4.826mm

Operating Temperature :

-55°C~175°C TJ