IRF2805SPBF
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- Mfr.Part #
- IRF2805SPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 135A D2PAK
- Stock
- 1,410
- In Stock ：
- 1,410
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Series :
- HEXFET®
- REACH SVHC :
- No SVHC
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 68 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 230nC @ 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Continuous Drain Current (ID) :
- 135A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 4.7m Ω @ 104A, 10V
- Turn On Delay Time :
- 14 ns
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 135A Tc
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 55V
- Threshold Voltage :
- 4V
- Operating Temperature :
- -55°C~175°C TJ
- Nominal Vgs :
- 4 V
- Length :
- 10.668mm
- Resistance :
- 4.7MOhm
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 110 ns
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 5110pF @ 25V
- Power Dissipation-Max :
- 200W Tc
- Power Dissipation :
- 200W
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Published :
- 2002
- Rise Time :
- 120ns
- Dual Supply Voltage :
- 55V
- Voltage - Rated DC :
- 55V
- Width :
- 9.652mm
- Current Rating :
- 135A
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Packaging :
- Tube
- Height :
- 4.826mm
- Datasheets
- IRF2805SPBF
N-Channel Tube 4.7m Ω @ 104A, 10V ±20V 5110pF @ 25V 230nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF2805SPBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5110pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 135A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=55V. And this device has 55V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 68 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 14 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
IRF2805SPBF Features
a continuous drain current (ID) of 135A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 68 ns
a threshold voltage of 4V
IRF2805SPBF Applications
There are a lot of Infineon Technologies
IRF2805SPBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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