IRF2805PBF
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- Mfr.Part #
- IRF2805PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 75A TO220AB
- Stock
- 23,270
- In Stock ：
- 23,270
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 75A
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 5110pF @ 25V
- FET Type :
- N-Channel
- Resistance :
- 4.7ohm
- Drain to Source Breakdown Voltage :
- 55V
- JEDEC-95 Code :
- TO-220AB
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 110 ns
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 700A
- Mount :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 120ns
- Gate to Source Voltage (Vgs) :
- 20V
- Threshold Voltage :
- 4V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- TO-220-3
- Power Dissipation :
- 330W
- Width :
- 4.826mm
- Turn On Delay Time :
- 14 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- HEXFET®
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- ECCN Code :
- EAR99
- Factory Lead Time :
- 12 Weeks
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Power Dissipation-Max :
- 330W Tc
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Nominal Vgs :
- 4 V
- Dual Supply Voltage :
- 55V
- Recovery Time :
- 120 ns
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 230nC @ 10V
- Voltage - Rated DC :
- 55V
- Published :
- 2002
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 4.7m Ω @ 104A, 10V
- Turn-Off Delay Time :
- 68 ns
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Length :
- 10.668mm
- Continuous Drain Current (ID) :
- 75A
- Height :
- 16.51mm
- Datasheets
- IRF2805PBF
IRF2805PBF Documents
N-Channel Tube 4.7m Ω @ 104A, 10V ±20V 5110pF @ 25V 230nC @ 10V TO-220-3
IRF2805PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5110pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 75A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 55V, and this device has a drainage-to-source breakdown voltage of 55VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 68 ns.Peak drain current is 700A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF2805PBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 700A.
a threshold voltage of 4V
IRF2805PBF Applications
There are a lot of Infineon Technologies
IRF2805PBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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