IRF2804STRL7PP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2003

Voltage - Rated DC :

40V

Operating Mode :

ENHANCEMENT MODE

Width :

8.15mm

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Mount :

Surface Mount

Mounting Type :

Surface Mount

Lead Free :

Contains Lead

Current Rating :

160A

ECCN Code :

EAR99

FET Type :

N-Channel

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Resistance :

1.6mOhm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

13 ns

Number of Terminations :

6

Recovery Time :

65 ns

Nominal Vgs :

4 V

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Power Dissipation :

330W

Rise Time :

150ns

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 160A, 10V

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Height :

4.5466mm

Continuous Drain Current (ID) :

320A

Threshold Voltage :

4V

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSSO-G6

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

330W Tc

Length :

10.5mm

Series :

HEXFET®

Fall Time (Typ) :

105 ns

Vgs (Max) :

±20V

REACH SVHC :

No SVHC

Number of Pins :

7

Drain to Source Breakdown Voltage :

40V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

6930pF @ 25V

Factory Lead Time :

12 Weeks

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Element Configuration :

Single

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

110 ns