IRF2804STRL-7P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

40V

Operating Mode :

ENHANCEMENT MODE

Published :

2003

Turn-Off Delay Time :

110 ns

Recovery Time :

65 ns

Power Dissipation :

330W

Current Rating :

160A

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Voltage - Rated DC :

40V

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G6

Mount :

Surface Mount

Radiation Hardening :

No

Case Connection :

DRAIN

Fall Time (Typ) :

105 ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Threshold Voltage :

4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

4.5466mm

Resistance :

1.6mOhm

Rise Time :

150ns

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Element Configuration :

Single

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Width :

8.15mm

Turn On Delay Time :

13 ns

Lead Free :

Contains Lead

Nominal Vgs :

4 V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

320A

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 160A, 10V

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Length :

10.5mm

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Number of Pins :

7

Number of Terminations :

6

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

330W Tc

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

6930pF @ 25V

Vgs (Max) :

±20V