IRF2804PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Factory Lead Time :

12 Weeks

Power Dissipation :

330W

Rise Time :

120ns

Threshold Voltage :

4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Power Dissipation-Max :

300W Tc

Mounting Type :

Through Hole

Package / Case :

TO-220-3

JESD-609 Code :

e3

Resistance :

2.3Ohm

Continuous Drain Current (ID) :

270A

Termination :

Through Hole

Number of Elements :

1

Radiation Hardening :

No

Recovery Time :

84 ns

Turn On Delay Time :

13 ns

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

6450pF @ 25V

Length :

10.6426mm

Lead Free :

Lead Free

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Width :

4.826mm

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Voltage - Rated DC :

40V

Dual Supply Voltage :

40V

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Number of Pins :

3

Number of Terminations :

3

Turn-Off Delay Time :

130 ns

Published :

2003

Series :

HEXFET®

Drain to Source Breakdown Voltage :

40V

Nominal Vgs :

4 V

Avalanche Energy Rating (Eas) :

540 mJ

Operating Temperature :

-55°C~175°C TJ

Height :

9.017mm

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 75A, 10V

Fall Time (Typ) :

130 ns

Current Rating :

75A

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Mount :

Through Hole