IRF2804

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Terminal Position :

Single

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Surface Mount :

No

Published :

2003

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

6450pF @ 25V

Avalanche Energy Rating (Eas) :

540 mJ

Power Dissipation-Max :

330W Tc

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 75A, 10V

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

75A Tc

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

75A

Drain to Source Voltage (Vdss) :

40V

DS Breakdown Voltage-Min :

40V

Transistor Application :

SWITCHING

FET Type :

N-Channel

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

HTS Code :

8541.29.00.95

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0023Ohm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

1080A

Mounting Type :

Through Hole

Number of Terminations :

3