IRF244

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

N-Channel

Vgs (Max) :

±20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

Unknown

Drain to Source Voltage (Vdss) :

250 V

JESD-30 Code :

O-MBFM-P2

Drain-source On Resistance-Max :

0.28 Ω

Supplier Device Package :

TO-3

Drive Voltage (Max Rds On, Min Rds On) :

10V

Manufacturer :

Rochester Electronics LLC

Rds On (Max) @ Id, Vgs :

280mOhm @ 8A, 10V

Current - Continuous Drain (Id) @ 25°C :

8.8A (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

1300 pF @ 25 V

Number of Terminals :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

PIN/PEG

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Package / Case :

TO-204AA, TO-3

Operating Mode :

ENHANCEMENT MODE

Package Shape :

Round

Terminal Position :

BOTTOM

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-204AA

DS Breakdown Voltage-Min :

250 V

Avalanche Energy Rating (Eas) :

550 mJ

Product Status :

Active

Series :

-

Pulsed Drain Current-Max (IDM) :

56 A

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation (Max) :

125W (Tc)

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Pbfree Code :

No

Transistor Element Material :

SILICON

FET Type :

N-Channel

Terminal Finish :

TIN LEAD

Package :

Bulk

JESD-609 Code :

e0

Qualification Status :

COMMERCIAL

FET Feature :

-

Gate Charge (Qg) (Max) @ Vgs :

59 nC @ 10 V

Surface Mount :

No