IPW65R310CFDFKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

290 mJ

Rise Time :

7.5ns

Vgs(th) (Max) @ Id :

4.5V @ 440μA

Current - Continuous Drain (Id) @ 25°C :

11.4A Tc

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

310m Ω @ 4.4A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 100V

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Turn-Off Delay Time :

45 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

11.4A

Series :

CoolMOS™

Number of Terminations :

3

Turn On Delay Time :

11 ns

Published :

2008

Mount :

Through Hole

Power Dissipation-Max :

104.2W Tc

JESD-609 Code :

e3

Max Dual Supply Voltage :

650V

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Package / Case :

TO-247-3

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

7 ns

Lead Free :

Lead Free

Terminal Position :

Single