IPW60R041C6FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T3

Drain to Source Voltage (Vdss) :

600V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

272A

Package / Case :

TO-247-3

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Pbfree Code :

yes

JESD-609 Code :

e3

Series :

CoolMOS™

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

290nC @ 10V

FET Type :

N-Channel

ECCN Code :

EAR99

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

41m Ω @ 44.4A, 10V

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

600V

Power Dissipation-Max :

481W Tc

Drain-source On Resistance-Max :

0.041Ohm

Published :

2008

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

1954 mJ

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

3.5V @ 2.96mA

Input Capacitance (Ciss) (Max) @ Vds :

6530pF @ 10V

Surface Mount :

No

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

77.5A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3